2N1613 PBFREE, Bipolar Transistors - BJT NPN Gen Pur SS

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900 шт., срок 7-9 недель

2 760 ֏

от 10 шт. — 2 140 ֏

от 100 шт. — 1 920 ֏

от 250 шт. — 1 770 ֏

Добавить в корзину 1 шт. на сумму 2 760 ֏

Номенклатурный номер: 8005049472

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 50V 500mA 60MHz 3W Through Hole TO-39

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	75 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	1.5 V
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	40
DC Current Gain hFE Max:	120
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	60 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-39
Packaging:	Bulk
Pd - Power Dissipation:	800 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	60MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-205AD, TO-39-3 Metal Can
Power - Max	3W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	1.01