2N3250 PBFREE, Bipolar Transistors - BJT PNP Gen Pur SS

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1659 шт., срок 7-9 недель

1 810 ֏

от 10 шт. — 1 460 ֏

от 100 шт. — 1 070 ֏

от 250 шт. — 1 000 ֏

1 шт. на сумму 1 810 ֏

Альтернативные предложения1

Номенклатурный номер: 8005049505

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 40V 200mA 250MHz 360mW Through Hole TO-18

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-18-3
Packaging:	Bulk
Pd - Power Dissipation:	360 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP
Current - Collector (Ic) (Max)	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 1V
ECCN	EAR99
Frequency - Transition	250MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max	360mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	40V
Вес, г	1