2N5308 PBFREE, Darlington Transistors NPN Darl Amp

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2473 шт., срок 5-8 недель

1 740 ֏

от 10 шт. — 1 340 ֏

от 100 шт. — 980 ֏

от 500 шт. — 780 ֏

Добавить в корзину 1 шт. на сумму 1 740 ֏

Номенклатурный номер: 8005049590

Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors

Биполярный (BJT) транзистор NPN - Дарлингтона 40V 300mA 60MHz 625mW Through Hole TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	40 V
Configuration:	Single
Continuous Collector Current:	300 mA
DC Collector/Base Gain hfe Min:	7000 at 2 mA, 5 V
DC Current Gain hFE Max:	70000 at 2 mA, 5 V
Emitter- Base Voltage VEBO:	12 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	60 MHz
Manufacturer:	Central Semiconductor
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Darlington Transistors
Product Type:	Darlington Transistors
Series:	2N53
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	300mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	7000 @ 2mA, 5V
ECCN	EAR99
Frequency - Transition	60MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN - Darlington
Vce Saturation (Max) @ Ib, Ic	1.4V @ 200ВµA, 200mA
Voltage - Collector Emitter Breakdown (Max)	40V
Вес, г	0.45