2N5322 PBFREE, Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W

Изображения служат только для ознакомления,
см. техническую документацию

589 шт., срок 7-9 недель

3 960 ֏

от 10 шт. — 3 170 ֏

от 100 шт. — 2 660 ֏

от 250 шт. — 2 340 ֏

1 шт. на сумму 3 960 ֏

Номенклатурный номер: 8005049592

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 75V 2A 50MHz 10W Through Hole TO-39

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	75 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	2 A
DC Collector/Base Gain hfe Min:	30
DC Current Gain hFE Max:	175
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-39
Packaging:	Bulk
Pd - Power Dissipation:	10 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP
Current - Collector (Ic) (Max)	2A
Current - Collector Cutoff (Max)	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 500mA, 4V
ECCN	EAR99
Frequency - Transition	50MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-205AD, TO-39-3 Metal Can
Power - Max	10W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Simulation Models	http://www.centralsemi.com/docs/csm/2N5322.LIB
Supplier Device Package	TO-39
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	75V
Вес, г	1.87