2N5400 PBFREE, Bipolar Transistors - BJT PNP 130Vcbo 120Veo 5.0Vebo 625mW

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2863 шт., срок 7-9 недель

580 ֏

от 10 шт. — 530 ֏

от 100 шт. — 357 ֏

от 500 шт. — 265 ֏

1 шт. на сумму 580 ֏

Номенклатурный номер: 8005049598

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	130 V
Collector- Emitter Voltage VCEO Max:	120 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	600 mA
DC Collector/Base Gain hfe Min:	40 at 10 mA, 5 V
DC Current Gain hFE Max:	240 at 10 mA, 5 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	400 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	600 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	2N54
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	1