2N6515 PBFREE, Bipolar Transistors - BJT . .

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6983 шт., срок 7-9 недель

580 ֏

от 10 шт. — 484 ֏

от 100 шт. — 326 ֏

от 500 шт. — 242 ֏

1 шт. на сумму 580 ֏

Номенклатурный номер: 8005049659

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	250 V
Collector- Emitter Voltage VCEO Max:	250 V
Collector-Emitter Saturation Voltage:	1 V
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	50
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Вес, г	0.22