BC107 PBFREE, Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd

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2491 шт., срок 5-8 недель

3 430 ֏

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Номенклатурный номер: 8005049675

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 45V 200mA 150MHz 600mW Through Hole TO-18

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	600 mV
Configuration:	Single
Continuous Collector Current:	200 mA
DC Collector/Base Gain hfe Min:	110
DC Current Gain hFE Max:	450
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	150 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-18-3
Packaging:	Bulk
Pd - Power Dissipation:	600 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	200mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2mA, 5V
ECCN	EAR99
Frequency - Transition	150MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max	600mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	45V
Вес, г	1.3