BC108B PBFREE, Bipolar Transistors - BJT NPN Trans 30Vcbo 25Vceo 5.0Vebo 600mW

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2077 шт., срок 5-8 недель

3 430 ֏

от 10 шт. — 2 720 ֏

от 100 шт. — 2 020 ֏

от 250 шт. — 1 740 ֏

Добавить в корзину 1 шт. на сумму 3 430 ֏

Номенклатурный номер: 8005049678

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	30 V
Collector- Emitter Voltage VCEO Max:	25 V
Collector-Emitter Saturation Voltage:	600 mV
Configuration:	Single
Continuous Collector Current:	200 mA
DC Collector/Base Gain hfe Min:	200
DC Current Gain hFE Max:	450
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Gain Bandwidth Product fT:	150 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-18
Packaging:	Bulk
Pd - Power Dissipation:	600 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Вес, г	0.39