BC857BR TR PBFREE, Bipolar Transistors - BJT 50V PNP 45Vceo 5.0Vebo 100mA 350mW

11474 шт., срок 7-9 недель

580 ֏

от 10 шт. — 418 ֏

от 100 шт. — 220 ֏

от 1000 шт. — 142 ֏

1 шт. на сумму 580 ֏

Номенклатурный номер: 8005049699

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 45V 100mA 100MHz 350mW Surface Mount SOT-23

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	650 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	330 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
ECCN	EAR99
Frequency - Transition	100MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	350mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	45V
Вес, г	1