CMPT6517 TR PBFREE, Bipolar Transistors - BJT Complementary HV 350Vcbo 350Vceo

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36752 шт., срок 7-9 недель

580 ֏

от 10 шт. — 440 ֏

от 100 шт. — 229 ֏

от 1000 шт. — 149 ֏

1 шт. на сумму 580 ֏

Номенклатурный номер: 8005049998

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 350V 500mA 200MHz 350mW Surface Mount SOT-23

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	350 V
Collector- Emitter Voltage VCEO Max:	350 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	30
DC Current Gain hFE Max:	200
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23
Pd - Power Dissipation:	350 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 50mA, 10V
ECCN	EAR99
Frequency - Transition	200MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	350mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	350V
Вес, г	0.01