CMST2222A TR PBFREE, Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW

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Номенклатурный номер: 8005050086

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	75 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	1 V
Configuration:	Single
Continuous Collector Current:	600 mA
DC Collector/Base Gain hfe Min:	35
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	600 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-3
Pd - Power Dissipation:	275 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Tradename:	SUPERmini
Transistor Polarity:	NPN
Вес, г	0.01