CMXT2222A TR PBFREE, Bipolar Transistors - BJT Dual NPN

Изображения служат только для ознакомления,
см. техническую документацию

2740 шт., срок 7-9 недель

620 ֏

от 10 шт. — 484 ֏

от 100 шт. — 242 ֏

от 1000 шт. — 161 ֏

1 шт. на сумму 620 ֏

Номенклатурный номер: 8005050111

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзисторный массив 2 NPN (двойной) 40 В, 600 мА, 300 МГц, 350 мВт, поверхностный монтаж, SOT-26

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	75 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Dual
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	40 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	600 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-26
Pd - Power Dissipation:	350 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Tradename:	SUPERmini
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	600mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	300MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-23-6
Power - Max	350mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-26
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	40V
Вес, г	0.01