MPQ2222 PBFREE, Bipolar Transistors - BJT Small Signal Transistor

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203 шт., срок 7-9 недель

6 600 ֏

от 10 шт. — 5 600 ֏

от 25 шт. — 4 670 ֏

от 100 шт. — 3 720 ֏

1 шт. на сумму 6 600 ֏

Номенклатурный номер: 8005050186

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзисторный массив 4 NPN (Quad) 40 В 500 мА 200 МГц 650 мВт сквозное отверстие TO-116

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Quad
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	100
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	25
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-116
Packaging:	Tube
Pd - Power Dissipation:	1.9 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	200MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	14-DIP (0.300"", 7.62mm)
Power - Max	650mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-116
Transistor Type	4 NPN (Quad)
Vce Saturation (Max) @ Ib, Ic	1.6V @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)	40V
Вес, г	0.4