MPSA18 PBFREE, Bipolar Transistors - BJT NPN Gen Pur SS

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1731 шт., срок 7-9 недель

1 150 ֏

от 10 шт. — 970 ֏

от 100 шт. — 650 ֏

от 500 шт. — 570 ֏

1 шт. на сумму 1 150 ֏

Альтернативные предложения2

Номенклатурный номер: 8005050215

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 45V 200mA 100MHz 625mW Through Hole TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	45 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
Continuous Collector Current:	200 mA
DC Collector/Base Gain hfe Min:	500
DC Current Gain hFE Max:	1500
Emitter- Base Voltage VEBO:	6.5 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	200mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	100MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	45V
Вес, г	0.4536