MPSA56 PBFREE, Bipolar Transistors - BJT PNP Med Power

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5874 шт., срок 7-9 недель

660 ֏

от 10 шт. — 580 ֏

от 100 шт. — 348 ֏

от 500 шт. — 258 ֏

1 шт. на сумму 660 ֏

Номенклатурный номер: 8005050221

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор PNP 80V 500mA 50MHz 625mW Through Hole TO-92

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	100
Emitter- Base Voltage VEBO:	4 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-92
Packaging:	Bulk
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	PNP
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 1V
ECCN	EAR99
Frequency - Transition	50MHz
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power - Max	625mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Simulation Models	http://www.centralsemi.com/docs/csm/MPSA56.LIB
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	80V
Вес, г	0.45