BC846A-7-F, Bipolar Transistors - BJT NPN BIPOLAR

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229 ֏

от 10 шт. — 159 ֏

от 100 шт. — 71 ֏

от 1000 шт. — 39 ֏

1 шт. на сумму 229 ֏

Номенклатурный номер: 8005058118

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: NPN, биполярный, 65В, 0,1А, 350мВт, SOT23 Характеристики

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	65 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	310 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC846
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Voltage	65 V
Maximum DC Collector Current	100 mA
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	300 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	300 mW
Minimum DC Current Gain	110
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Collector Current (Ic)	100mA
Collector Cut-Off Current (Icbo)	15nA
Collector-Emitter Breakdown Voltage (Vceo)	65V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	200mV@100mA, 5mA
DC Current Gain (hFE@Ic,Vce)	110@2mA, 5V
Operating Temperature	-65℃~+150℃@(Tj)
Power Dissipation (Pd)	300mW
Transition Frequency (fT)	300MHz
Вес, г	0.01