BC847BLP-7, Bipolar Transistors - BJT 250mW 45V
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см. техническую документацию
см. техническую документацию
344 ֏
от 10 шт. —
247 ֏
от 100 шт. —
106 ֏
от 1000 шт. —
77 ֏
1 шт.
на сумму 344 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный (BJT) транзистор NPN 45V 100mA 100MHz 250mW Surface Mount 3-X1DFN1006
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 200 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN1006-3 |
| Pd - Power Dissipation: | 400 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC847B |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Base Product Number | BC847 -> |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| ECCN | EAR99 |
| Frequency - Transition | 100MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 3-UFDFN |
| Power - Max | 250mW |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 3-X1DFN1006 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 0.5mA 10mA|0.6 5mA 100mA |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Minimum DC Current Gain | 200 2mA 5V |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Bipolar Small Signal |
| Standard Package Name | DFN |
| Supplier Package | X1-DFN |
| Type | NPN |
| Collector Emitter Voltage Max | 45В |
| Continuous Collector Current | 100мА |
| DC Current Gain hFE Min | 200hFE |
| DC Усиление Тока hFE | 200hFE |
| Power Dissipation | 1Вт |
| Квалификация | - |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | BC847 Series |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | NPN |
| Стиль Корпуса Транзистора | X1-DFN1006 |
| Частота Перехода ft | 100МГц |
| Вес, г | 2.7 |
Техническая документация
Datasheet
pdf, 251 КБ
Datasheet BC847BLP-7
pdf, 280 КБ
Datasheet BC847BLP-7
pdf, 247 КБ
Datasheet BC847BLP-7
pdf, 247 КБ
