BC847BVC-7, Bipolar Transistors - BJT NPN BIPOLAR

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484 ֏

от 10 шт. — 366 ֏

от 100 шт. — 190 ֏

от 1000 шт. — 125 ֏

1 шт. на сумму 484 ֏

Номенклатурный номер: 8005058135

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Trans GP BJT NPN 45V 0.1A 150mW 6-Pin SOT-563 T/R

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Dual
DC Collector/Base Gain hfe Min:	200
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-563-6
Pd - Power Dissipation:	150 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC847B
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Automotive	No
Configuration	Dual
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Flat
Maximum Base Emitter Saturation Voltage (V)	0.7(Typ)0.5mA 10mA\|0.9(Typ)5mA 100mA
Maximum Collector Base Voltage (V)	50
Maximum Collector-Emitter Saturation Voltage (V)	0.1 0.5mA 10mA\|0.3 5mA 100mA
Maximum Collector-Emitter Voltage (V)	45
Maximum DC Collector Current (A)	0.1
Maximum Emitter Base Voltage (V)	6
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	150
Maximum Transition Frequency (MHz)	100(Min)
Minimum DC Current Gain	200 2mA 5V
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	2
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Product Category	Bipolar Small Signal
Standard Package Name	SOT-563
Supplier Package	SOT-563
Type	NPN
Вес, г	0.01