BC847C-13-F, Bipolar Transistors - BJT NPN SM SS Trans 50Vcbo 45Vceo 200mA

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256 ֏

от 10 шт. — 172 ֏

от 100 шт. — 80 ֏

от 1000 шт. — 40 ֏

1 шт. на сумму 256 ֏

Номенклатурный номер: 8005058138

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 45V 100mA 300MHz 310mW Surface Mount SOT-23

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Single
Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	600
DC Current Gain hFE Max:	800
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	10000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	310 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC847C
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Base Product Number	BC847 ->
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	15nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
ECCN	EAR99
Frequency - Transition	300MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	310mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	45V
Вес, г	0.01