BC856AS-7, Bipolar Transistors - BJT 100mA 65V
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см. техническую документацию
см. техническую документацию
357 ֏
от 10 шт. —
247 ֏
от 100 шт. —
97 ֏
от 1000 шт. —
76 ֏
1 шт.
на сумму 357 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Configuration: | Dual |
| DC Collector/Base Gain hfe Min: | 125 |
| DC Current Gain hFE Max: | 250 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC856A |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 585 КБ
