DDTB113ZC-7-F, Digital Transistors 200MW 1K 10K

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322 ֏

от 10 шт. — 216 ֏

от 100 шт. — 88 ֏

от 1000 шт. — 56 ֏

1 шт. на сумму 322 ֏

Номенклатурный номер: 8005058627

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Digital Transistors

Биполярный транзистор с предварительным смещением (BJT) PNP - с предварительным смещением 50 В 500 мА 200 МГц 200 мВт поверхностный монтаж SOT-23-3

Brand:	Diodes Incorporated
Collector- Emitter Voltage VCEO Max:	40 V
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	56
Factory Pack Quantity: Factory Pack Quantity:	3000
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Peak DC Collector Current:	500 mA
Product Category:	Bipolar Transistors-Pre-Biased
Product Type:	BJTs-Bipolar Transistors-Pre-Biased
Series:	DDTB113
Subcategory:	Transistors
Transistor Polarity:	PNP
Typical Input Resistor:	1 kOhms
Typical Resistor Ratio:	0.1
Base Product Number	DDTB113 ->
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
ECCN	EAR99
Frequency - Transition	200MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200mW
REACH Status	REACH Unaffected
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	10 kOhms
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23-3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	1