DMJT9435-13, Bipolar Transistors - BJT LOW VSAT PNP SMT
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см. техническую документацию
см. техническую документацию
580 ֏
от 10 шт. —
484 ֏
от 100 шт. —
317 ֏
от 500 шт. —
234 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 45 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 550 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 90 at 3 A, 1 V |
| DC Current Gain hFE Max: | 125 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 160 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | DMJT9435 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.11 |
Техническая документация
Datasheet DMJT9435-13
pdf, 102 КБ
