DPLS350Y-13, Bipolar Transistors - BJT 1000mW -50Vceo
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см. техническую документацию
см. техническую документацию
580 ֏
от 10 шт. —
436 ֏
от 100 шт. —
225 ֏
от 1000 шт. —
147 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Maximum Collector Base Voltage | -50 V |
| Maximum Collector Emitter Voltage | -50 V |
| Maximum DC Collector Current | -3 A |
| Maximum Emitter Base Voltage | -6 V |
| Maximum Operating Frequency | 100 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum DC Current Gain | 200 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-89 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Collector Current (Ic) | 3A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 390mV@3A, 300mA |
| DC Current Gain (hFE@Ic,Vce) | 200@1A, 2V |
| Power Dissipation (Pd) | 1W |
| Transition Frequency (fT) | 100MHz |
