DSS2515M-7B, Bipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K

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620 ֏

от 10 шт. — 418 ֏

от 100 шт. — 176 ֏

от 1000 шт. — 117 ֏

1 шт. на сумму 620 ֏

Номенклатурный номер: 8005059688

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	15 V
Collector- Emitter Voltage VCEO Max:	15 V
Collector-Emitter Saturation Voltage:	250 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	90 at 500 mA, 2 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	10000
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	DFN1006-3
Pd - Power Dissipation:	400 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	DSS25
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	9