DSS5160TQ-7, Bipolar Transistors - BJT SS Low Sat Transistor

DSS5160TQ-7, Bipolar Transistors - BJT SS Low Sat Transistor
Изображения служат только для ознакомления,
см. техническую документацию
580 ֏
от 10 шт.436 ֏
от 100 шт.229 ֏
от 1000 шт.147 ֏
1 шт. на сумму 580 ֏
Номенклатурный номер: 8005059700
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive Bipolar Junction Transistors (BJT) Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 80 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 340 mV
Configuration: Single
Continuous Collector Current: -1 A
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 150 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Pd - Power Dissipation: 725 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Qualification: AEC-Q101
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Вес, г 24

Техническая документация

Datasheet
pdf, 326 КБ