DST847BDJ-7, Bipolar Transistors - BJT BIPOLAR TRANS NPN

DST847BDJ-7, Bipolar Transistors - BJT BIPOLAR TRANS NPN
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см. техническую документацию
530 ֏
от 10 шт.383 ֏
от 100 шт.168 ֏
от 1000 шт.98 ֏
1 шт. на сумму 530 ֏
Номенклатурный номер: 8005059713
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
DST Series Bipolar Transistors
Diodes Incorporated DST Series Bipolar Transistors are surface mounted devices ideally suited for automated assembly processes. The DST Series includes NPN, PNP, and NPN/PNP polarity devices. DST Series Bipolar Transistors are offered in an ultra small, lead-free, RoHS compliant SOT-963 package.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 300 mV
Configuration: Dual
Continuous Collector Current: 100 mA
DC Collector/Base Gain hfe Min: 200
DC Current Gain hFE Max: 470
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 10000
Gain Bandwidth Product fT: 170 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-963-6
Pd - Power Dissipation: 300 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: DST847
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 28.35

Техническая документация

Datasheet DST847BDJ-7
pdf, 358 КБ