DXTA42-13, Bipolar Transistors - BJT 1000mW 300Vceo

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530 ֏

от 10 шт. — 436 ֏

от 100 шт. — 286 ֏

от 500 шт. — 211 ֏

1 шт. на сумму 530 ֏

Номенклатурный номер: 8005059741

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	300 V
Collector- Emitter Voltage VCEO Max:	300 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	25 at 1 mA, 10 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	DXTA42
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector-Emitter Breakdown Voltage	300V
Maximum DC Collector Current	500mA
Pd - Power Dissipation	1W
Transistor Type	NPN
Вес, г	0.05