DXTN3C100PSQ-13, Bipolar Transistors - BJT 100V NPN Medium Pwr Low Sat Transistor
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см. техническую документацию
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800 ֏
от 10 шт. —
710 ֏
от 100 шт. —
467 ֏
от 500 шт. —
355 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive Bipolar Junction Transistors (BJT)Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage: | 225 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3 A |
| DC Collector/Base Gain hfe Min: | 10 |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 140 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerDI5060-8 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 650 КБ
