DXTP3C60PSQ-13, Bipolar Transistors - BJT 60V PNP Medium Pwr Low Sat Transistor
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800 ֏
от 10 шт. —
710 ֏
от 100 шт. —
436 ֏
от 500 шт. —
327 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive Bipolar Junction Transistors (BJT)Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 240 mV |
| Configuration: | Single |
| Continuous Collector Current: | -3 A |
| DC Collector/Base Gain hfe Min: | 35 |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 135 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerDI5060-8 |
| Pd - Power Dissipation: | 5 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Emitter Voltage Max | 60В |
| Continuous Collector Current | 3А |
| DC Current Gain hFE Min | 35hFE |
| DC Усиление Тока hFE | 35hFE |
| Power Dissipation | 5Вт |
| Квалификация | AEC-Q101 |
| Количество Выводов | 8вывод(-ов) |
| Линейка Продукции | DXT Series |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | PNP |
| Стиль Корпуса Транзистора | PowerDI5060 |
| Частота Перехода ft | 135МГц |
| Maximum Collector Emitter Voltage | -60 V |
| Maximum DC Collector Current | -30 A |
| Minimum DC Current Gain | 150 |
| Mounting Type | Surface Mount |
| Package Type | PowerDI5060-8 |
| Pin Count | 8 |
| Transistor Type | PNP |
| Вес, г | 0.1 |
