MJD31C-13, Bipolar Transistors - BJT 100V 5A NPN SMT

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580 ֏

от 10 шт. — 484 ֏

от 100 шт. — 269 ֏

от 500 шт. — 224 ֏

1 шт. на сумму 580 ֏

Номенклатурный номер: 8005059982

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 100V 3A 3MHz 1,56W Surface Mount DPAK

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	1.2 V
Configuration:	Single
Continuous Collector Current:	3 A
DC Collector/Base Gain hfe Min:	25
DC Current Gain hFE Max:	40 at 3 A, 4 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	3 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	3 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	DPAK-3
Pd - Power Dissipation:	2.1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	MJD31C
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Base Product Number	MJD31 ->
Current - Collector (Ic) (Max)	3A
Current - Collector Cutoff (Max)	1ВµA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
ECCN	EAR99
Frequency - Transition	3MHz
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max	1.56W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Voltage - Collector Emitter Breakdown (Max)	100V
Вес, г	0.35