MJD31CQ-13, Bipolar Transistors - BJT Pwr Mid Perf Transistor
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см. техническую документацию
см. техническую документацию
800 ֏
от 10 шт. —
710 ֏
от 100 шт. —
436 ֏
от 500 шт. —
350 ֏
1 шт.
на сумму 800 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive ApplicationsDiodes Inc. Automotive Parts have a wide portfolio of automotive-compliant analog, discrete and timing products. The Automotive Parts offer a broad range of solutions for various automotive applications, including BLDC, Adaptive LED Lighting, and Connected Driving.
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 100 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Collector-Emitter Saturation Voltage: | 1.2 V |
Configuration: | Single |
Continuous Collector Current: | 3 A |
DC Collector/Base Gain hfe Min: | 10 |
DC Current Gain hFE Max: | 50 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Gain Bandwidth Product fT: | 3 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 3 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 15 W |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Qualification: | AEC-Q101 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 417 КБ