MMBT6427-7-F, Darlington Transistors 40V 300mW
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см. техническую документацию
см. техническую документацию
308 ֏
от 10 шт. —
207 ֏
от 100 шт. —
80 ֏
от 1000 шт. —
56 ֏
1 шт.
на сумму 308 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Configuration: | Single |
DC Collector/Base Gain hfe Min: | 10000 |
Emitter- Base Voltage VEBO: | 12 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Manufacturer: | Diodes Incorporated |
Maximum Collector Cut-off Current: | 50 nA |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Product Category: | Darlington Transistors |
Product Type: | Darlington Transistors |
Series: | MMBT6427 |
Subcategory: | Transistors |
Transistor Polarity: | NPN |
Case | SOT23 |
Collector current | 0.5A |
Collector-emitter voltage | 40V |
Kind of package | reel, tape |
Kind of transistor | Darlington |
Manufacturer | DIODES INCORPORATED |
Mounting | SMD |
Polarisation | bipolar |
Power dissipation | 0.3W |
Type of transistor | NPN |
Collector Current (Ic) | 500mA |
Collector cut-off current (Icbo@Vcb) | 1uA |
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 1.5V@500mA, 500uA |
Collector-emitter voltage (Vceo) | 40V |
DC current gain (hFE@Vce,Ic) | 20000@5V, 100mA |
Power Dissipation (Pd) | 300mW |
Transistor Type | NPN |
Вес, г | 1 |
Техническая документация
Datasheet MMBT6427-7-F
pdf, 118 КБ