MMBTA05Q-13-F, Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 10K

Фото 1/3 MMBTA05Q-13-F, Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 10K
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410 ֏
от 10 шт.278 ֏
от 100 шт.110 ֏
от 1000 шт.64 ֏
1 шт. на сумму 410 ֏
Номенклатурный номер: 8005060032
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive Bipolar Junction Transistors (BJT)
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 250 mV
Configuration: Single
Continuous Collector Current: 500 mA
DC Collector/Base Gain hfe Min: 100
Emitter- Base Voltage VEBO: 4 V
Factory Pack Quantity: Factory Pack Quantity: 10000
Gain Bandwidth Product fT: 100 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 310 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Qualification: AEC-Q101
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Collector Emitter Voltage Max 60В
Continuous Collector Current 500мА
DC Current Gain hFE Min 100hFE
DC Усиление Тока hFE 100hFE
Power Dissipation 350мВт
Квалификация AEC-Q101
Количество Выводов 3вывод(-ов)
Линейка Продукции -
Максимальная Рабочая Температура 150°C
Монтаж транзистора Surface Mount
Полярность Транзистора NPN
Стиль Корпуса Транзистора SOT-23
Частота Перехода ft 100МГц
Automotive Yes
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Collector Base Voltage (V) 60
Maximum Collector-Emitter Saturation Voltage (V) 0.25@10mA@100mA
Maximum Collector-Emitter Voltage (V) 60
Maximum DC Collector Current (A) 0.5
Maximum Emitter Base Voltage (V) 4
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 350
Maximum Transition Frequency (MHz) 100(Min)
Minimum DC Current Gain 100@10mA@1V|100@100mA@1V
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP Yes
Product Category Bipolar Small Signal
Standard Package Name SOT
Supplier Package SOT-23
Type NPN
Вес, г 0.01

Техническая документация

Datasheet
pdf, 246 КБ
Datasheet
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