MMDT2227-7-F, Bipolar Transistors - BJT 40 / 60V 200mW
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см. техническую документацию
см. техническую документацию
580 ֏
от 10 шт. —
370 ֏
от 100 шт. —
154 ֏
от 1000 шт. —
111 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 75 V, 60 V |
Collector- Emitter Voltage VCEO Max: | 40 V, 60 V |
Collector-Emitter Saturation Voltage: | 1 V, 1.6 V |
Configuration: | Dual |
Continuous Collector Current: | 600 mA |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 300 MHz, 200 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-363-6 |
Pd - Power Dissipation: | 200 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMDT22 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN, PNP |
Maximum Collector Base Voltage | 75 V |
Maximum Collector Emitter Voltage | 60 V |
Maximum DC Collector Current | 600 mA |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 200 mW |
Minimum DC Current Gain | 100 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SOT-363(SC-88) |
Pin Count | 6 |
Transistor Configuration | Isolated |
Transistor Type | NPN+PNP |
Вес, г | 0.737 |