MMDT3904Q-7-F, Bipolar Transistors - BJT 40V Dual NPN Small Signal Transistor
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484 ֏
от 10 шт. —
335 ֏
от 100 шт. —
203 ֏
от 1000 шт. —
85 ֏
1 шт.
на сумму 484 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Automotive Bipolar Junction Transistors (BJT)Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 60 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Dual |
| Continuous Collector Current: | 200 mA |
| DC Collector/Base Gain hfe Min: | 30 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Series: | MMDT3904Q |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Collector Emitter Voltage Max NPN | 40В |
| Collector Emitter Voltage Max PNP | - |
| Continuous Collector Current NPN | 200мА |
| Continuous Collector Current PNP | - |
| DC Current Gain hFE Min NPN | 100hFE |
| DC Current Gain hFE Min PNP | - |
| DC Ток Коллектора | 200мА |
| DC Усиление Тока hFE | 100hFE |
| Power Dissipation NPN | 200мВт |
| Power Dissipation PNP | - |
| Transition Frequency NPN | 300МГц |
| Transition Frequency PNP | - |
| Квалификация | AEC-Q101 |
| Количество Выводов | 6вывод(-ов) |
| Линейка Продукции | - |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Коллектор-Эмиттер | 40В |
| Полярность Транзистора | Двойной NPN |
| Рассеиваемая Мощность | 200мВт |
| Стандарты Автомобильной Промышленности | AEC-Q101 |
| Стиль Корпуса Транзистора | SOT-363 |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 304 КБ
