MMDT3946-7-F, Bipolar Transistors - BJT 40 / 40V 200mW
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
423 ֏
от 10 шт. —
216 ֏
от 100 шт. —
110 ֏
от 1000 шт. —
84 ֏
1 шт.
на сумму 423 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT NPN/PNP 40V 0.2A 200mW 6-Pin SOT-363 T/R
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 60 V, 40 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 300 mV, 400 mV |
| Configuration: | Dual |
| Continuous Collector Current: | 200 mA |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 6 V, 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz, 250 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | MMDT39 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Configuration | Dual |
| Continuous Collector Current | 0.2 A |
| DC Current Gain HFE Max | 300 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product FT | 300 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 200 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | MMDT39 |
| Subcategory | Transistors |
| Transistor Polarity | NPN, PNP |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.95@5mA@50mA |
| Maximum Collector Base Voltage (V) | 60@NPN|40@PNP |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6@NPN|5@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Transition Frequency (MHz) | 300(Min)@NPN|250(Min)@PNP |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| Type | NPN|PNP |
| Maximum Collector Base Voltage | 60 V |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Package Type | SOT-363(SC-88) |
| Transistor Configuration | Isolated |
| Transistor Type | NPN/PNP |
| Вес, г | 0.01 |
