MMDT4403-7-F, Bipolar Transistors - BJT -40V 200mW
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см. техническую документацию
580 ֏
от 10 шт. —
383 ֏
от 100 шт. —
154 ֏
от 1000 шт. —
110 ֏
1 шт.
на сумму 580 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 750 mV |
Configuration: | Dual |
Continuous Collector Current: | -600 mA |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 200 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-363-6 |
Pd - Power Dissipation: | 200 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMDT44 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Automotive | No |
Configuration | Dual |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 0.95 15mA 150mA|1.3 50mA 500mA |
Maximum Collector Base Voltage (V) | 40 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.75 50mA 500mA|0.4 15mA 150mA |
Maximum Collector-Emitter Voltage (V) | 40 |
Maximum DC Collector Current (A) | 0.6 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 200 |
Maximum Transition Frequency (MHz) | 200(Min) |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 6 |
Pin Count | 6 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT-26 |
Supplier Package | SOT-363 |
Type | PNP |
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -40 V |
Collector- Emitter Voltage VCEO Max | -40 V |
Collector-Emitter Saturation Voltage | -0.75 V |
Continuous Collector Current | -0.6 A |
DC Current Gain HFE Max | 300 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 200 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 0.6 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-363-6 |
Pd - Power Dissipation | 200 mW |
Product Type | BJTs-Bipolar Transistors |
Series | MMDT44 |
Subcategory | Transistors |
Transistor Polarity | PNP |
Вес, г | 1 |