MMDTA42-7-F, Bipolar Transistors - BJT NPN BIPOLAR
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см. техническую документацию
см. техническую документацию
530 ֏
от 10 шт. —
370 ֏
от 100 шт. —
159 ֏
от 1000 шт. —
114 ֏
1 шт.
на сумму 530 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 300 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Dual |
| DC Collector/Base Gain hfe Min: | 25 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 50 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-26-6 |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | MMDTA |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 300 V |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Configuration | Dual |
| DC Collector/Base Gain Hfe Min | 25 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product FT | 50 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-26-6 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 300 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | MMDTA |
| Subcategory | Transistors |
| Transistor Polarity | NPN |
| Вес, г | 0.01 |
Техническая документация
Datasheet MMDTA42-7-F
pdf, 103 КБ
