SBR2M30P1-7, Schottky Diodes & Rectifiers 2A 30V Ultralow IR
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Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
SBR® Super Barrier RectifiersDiodes Inc SBR ® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Технические параметры
Brand: | Diodes Incorporated |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
If - Forward Current: | 2 A |
Ifsm - Forward Surge Current: | 75 A |
Ir - Reverse Current: | 200 uA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package / Case: | PowerDI-123-2 |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Rectifiers |
Series: | SBR2M30 |
Subcategory: | Diodes & Rectifiers |
Technology: | Si |
Tradename: | POWERDI |
Vf - Forward Voltage: | 390 mV |
Vr - Reverse Voltage: | 30 V |
Vrrm - Repetitive Reverse Voltage: | 30 V |
Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 520 КБ
Диоды импортные
pdf, 304 КБ