SBR3U30P1-7, Schottky Diodes & Rectifiers 3A 30V Ultralow VF
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630 ֏
от 10 шт. —
489 ֏
от 100 шт. —
272 ֏
от 500 шт. —
245 ֏
1 шт.
на сумму 630 ֏
Описание
Semiconductors\Discrete Semiconductors\Diodes & Rectifiers\Schottky Diodes & Rectifiers
SBR® Super Barrier RectifiersDiodes Inc SBR ® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.
Технические параметры
Brand: | Diodes Incorporated |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
If - Forward Current: | 3 A |
Ifsm - Forward Surge Current: | 75 A |
Ir - Reverse Current: | 400 uA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package / Case: | PowerDI-123-2 |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Rectifiers |
Series: | SBR3U30 |
Subcategory: | Diodes & Rectifiers |
Technology: | Si |
Tradename: | POWERDI |
Vf - Forward Voltage: | 430 mV |
Vr - Reverse Voltage: | 30 V |
Vrrm - Repetitive Reverse Voltage: | 30 V |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.10.00.80 |
Type | Super Barrier Rectifier |
Maximum DC Reverse Voltage (V) | 30 |
Configuration | Single |
Peak Reverse Repetitive Voltage (V) | 30 |
Maximum Continuous Forward Current (A) | 3 |
Peak Non-Repetitive Surge Current (A) | 75 |
Peak Forward Voltage (V) | 0.43 |
Peak Reverse Current (uA) | 400 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | PowerDI 123 |
Pin Count | 2 |
Supplier Package | PowerDI 123 |
Military | No |
Mounting | Surface Mount |
Package Height | 0.98 |
Package Length | 2.8 |
Package Width | 1.78 |
PCB changed | 2 |
Lead Shape | No Lead |
If - Forward Current | 3A |
Peak Reverse Voltage | 30V |
Vf - Forward Voltage | 430mV @ 3A |
Diode Configuration | Single |
Diode Technology | Schottky |
Diode Type | Schottky |
Maximum Continuous Forward Current | 3A |
Maximum Forward Voltage Drop | 430mV |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | PowerDI 123 |
Peak Non-Repetitive Forward Surge Current | 75A |
Peak Reverse Repetitive Voltage | 30V |
Rectifier Type | Schottky Rectifier |
Вес, г | 0.02 |
Техническая документация
Datasheet SBR3U30P1-7
pdf, 150 КБ
Datasheet SBR3U30P1-7
pdf, 384 КБ
Datasheet SBR3U30P1-7
pdf, 145 КБ
Диоды импортные
pdf, 304 КБ