DD1200S45KL3_B5, IGBT Modules IHV IHM T XHP 3 3-6 5K
1 582 000 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 4.5 kV |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 1.2 kA |
| Factory Pack Quantity: | 2 |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -50 C |
| Packaging: | Tray |
| Part # Aliases: | SP000997618 DD1200S45KL3B5NOSA1 |
| Pd - Power Dissipation: | 2.4 MW |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, кг | 1 |
Техническая документация
Datasheet
pdf, 362 КБ
Datasheet DD1200S45KL3_B5
pdf, 565 КБ
