F3L100R07W2E3_B11, IGBT Modules IGBT MODULES 650V 100A
79 800 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Модули биполярных транзисторов с изолированным затвором (IGBT) IGBT MODULES 650V 100A
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.45 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 117 A |
| Factory Pack Quantity: | 15 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | SP000638564 F3L100R07W2E3B11BOMA1 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 39 |
Техническая документация
Datasheet
pdf, 759 КБ
Datasheet F3L100R07W2E3_B11
pdf, 759 КБ
