FD300R12KE3, IGBT Modules 1200V 300A CHOPPER
180 000 ֏
от 10 шт. —
151 000 ֏
Добавить в корзину 1 шт.
на сумму 180 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 480 A |
| Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | IS5a(62 mm)-5 |
| Packaging: | Tray |
| Part # Aliases: | SP000083496 FD300R12KE3HOSA1 |
| Pd - Power Dissipation: | 1.47 kW |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 340 |
