FF150R17ME3G, IGBT Modules N-CH 1.7KV 240A
170 000 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Модули биполярных транзисторов с изолированным затвором (IGBT) N-CH 1.7KV 240A
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Collector-Emitter Saturation Voltage: | 2 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 240 A |
| Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | Econo D |
| Packaging: | Tray |
| Part # Aliases: | SP000091951 FF150R17ME3GBOSA1 |
| Pd - Power Dissipation: | 1.05 kW |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 345 |
Техническая документация
Datasheet
pdf, 439 КБ
Datasheet FF150R17ME3G
pdf, 439 КБ
