FP15R12W1T4, IGBT Modules IGBT-MODULE
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см. техническую документацию
см. техническую документацию
52 600 ֏
от 10 шт. —
42 500 ֏
1 шт.
на сумму 52 600 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 28 A |
| Factory Pack Quantity: Factory Pack Quantity: | 24 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | EASY1B |
| Packaging: | Tray |
| Part # Aliases: | SP000364071 FP15R12W1T4BOMA1 |
| Pd - Power Dissipation: | 130 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | Trenchstop IGBT4-T4 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | EasyPIM |
| Вес, г | 24 |
Техническая документация
Datasheet
pdf, 1128 КБ
