FP20R06W1E3_B11, IGBT Modules IGBT Module 20A 600V
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
48 500 ֏
Добавить в корзину 1 шт.
на сумму 48 500 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.55 V |
Configuration: | 3-Phase Inverter |
Continuous Collector Current at 25 C: | 27 A |
Factory Pack Quantity: | 24 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -40 C |
Packaging: | Tray |
Part # Aliases: | SP000790726 FP20R06W1E3B11BOMA1 |
Pd - Power Dissipation: | 94 W |
Product Category: | IGBT Modules |
Product Type: | IGBT Modules |
Product: | IGBT Silicon Modules |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 24 |