FP50R12KT3, IGBT Modules N-CH 1.2KV 75A
157 000 ֏
от 10 шт. —
125 000 ֏
Добавить в корзину 1 шт.
на сумму 157 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | 3-Phase Inverter |
| Continuous Collector Current at 25 C: | 75 A |
| Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | Econo 3 |
| Packaging: | Tray |
| Part # Aliases: | SP000100445 FP50R12KT3BOSA1 |
| Pd - Power Dissipation: | 280 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 300 |
Техническая документация
Datasheet
pdf, 506 КБ
