DN2450N8-G, MOSFETs MOSFET DEPLETION MODE 500V 10 Ohms
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см. техническую документацию
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740 ֏
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690 ֏
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Описание
Unclassified
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Forward Transconductance - Min: | 500 S |
| Id - Continuous Drain Current: | 160 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-89-3 |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 10 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Case | SOT89-3 |
| Drain-source voltage | 500V |
| Gate-source voltage | ±20V |
| Kind of channel | depleted |
| Kind of package | reel, tape |
| Manufacturer | MICROCHIP TECHNOLOGY |
| Mounting | SMD |
| On-state resistance | 10Ω |
| Polarisation | unipolar |
| Power dissipation | 1.6W |
| Pulsed drain current | 0.7A |
| Type of transistor | N-MOSFET |
| Вес, г | 0.05 |
Техническая документация
Datasheet DN2450K4-G
pdf, 624 КБ
