DN2530N3-G, MOSFETs 300V 12Ohm
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см. техническую документацию
см. техническую документацию
1 020 ֏
от 100 шт. —
750 ֏
от 500 шт. —
650 ֏
1 шт.
на сумму 1 020 ֏
Описание
Unclassified
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 20 ns |
| Forward Transconductance - Min: | 300 mS |
| Id - Continuous Drain Current: | 175 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 740 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 12 Ohms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.175 |
| Maximum Drain Source Resistance (mOhm) | 12000@0V |
| Maximum Drain Source Voltage (V) | 300 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 740 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Bag |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| Typical Fall Time (ns) | 20(Max) |
| Typical Input Capacitance @ Vds (pF) | 300(Max)@25V |
| Typical Rise Time (ns) | 15(Max) |
| Typical Turn-Off Delay Time (ns) | 15(Max) |
| Typical Turn-On Delay Time (ns) | 10(Max) |
| Case | TO92 |
| Drain-source voltage | 300V |
| Gate-source voltage | ±20V |
| Kind of channel | depleted |
| Kind of package | bulk |
| Manufacturer | MICROCHIP TECHNOLOGY |
| On-state resistance | 12Ω |
| Polarisation | unipolar |
| Power dissipation | 1.6W |
| Pulsed drain current | 0.2A |
| Type of transistor | N-MOSFET |
| Continuous Drain Current (Id) | 175mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12Ω@150mA, 0V |
| Drain Source Voltage (Vdss) | 300V |
| Input Capacitance (Ciss@Vds) | 300pF@25V |
| Power Dissipation (Pd) | 740mW |
| Type | 1PCSNChannel |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 665 КБ
Datasheet DN2530N8-G
pdf, 509 КБ
