TN0110N3-G, MOSFETs 100V 3Ohm
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см. техническую документацию
см. техническую документацию
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Описание
Unclassified
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 3 ns |
| Forward Transconductance - Min: | 225 mS |
| Id - Continuous Drain Current: | 350 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Rise Time: | 3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 2 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 608 КБ
